Radiation Hardened SRAM
Unveil our Radiation-Hardened SRAM, an advanced 32-bit parallel memory solution meticulously engineered for demanding environments. Operating seamlessly with a precisely regulated 1.8V core supply voltage, this SRAM thrives in temperatures ranging from -55°C to +125°C. Featuring a capacious 16 Mega Bit memory, a meticulously sealed leaded flatpack, and a highly adaptable three-state bidirectional data bus, it sets new standards for durability and compatibility. With an impressive Soft Error Rate of 10^(-10) errors/bit-day or better, it's tailor-made for aerospace applications, delivering rapid 20 ns read cycles and demonstrating immunity to Single Event Upsets. Trust in its sophisticated resilience for pivotal projects that demand unparalleled performance.
→ Data Width: 32 Bit Parallel
→ 1.8 +/- 0.15V Core Supply Voltage
→ 3.3V ± 0.3V I/O Supply Voltage
→ 16 Mega Bits
→ 3.3V TTL/CMOS Input/Output Compatibility
→ Three State Bidirectional Data Bus
→ Asynchronous Read and Write
→ Operating temperature -55 °C to +125 °C
→ Hermetically Sealed Leaded Flatpack <(1.25” X 1.25”)
→ SER (Soft Error Rate) 10^(-10) errors/bit-day or better
→ 20 ns typical Read Cycle Time
→ 20 ns (max) Address Access Time
→ 20 ns (max) Chip Select Access Time
→ 10 ns (max) Output Enable Access Time
→ 20 ns or better Write Cycle Time (min)
→ Radiation Hardened upto 300 krads
→ SEL Immunity >100 MeV/mg/cm2
→ No SEFIs up to 100 MeV/mg/cm2
→ SEU LET threshold above 40 MeV/mg/cm2