n-type/B/n-type nBn based MWIR Photodetectors
Unveiling our nBn-based MWIR Photodetectors, meticulously engineered with a pixel density of 2K x 2K and an ultra-compact 8μm size for unparalleled sensitivity and spatial resolution. Operating within the 3μm to 5μm spectral band, these detectors boast a dynamic range of 14 to 16 bits and an ultrafast < 100nsec response time, ensuring precise real-time thermal imaging. Resilient against Total Ionizing Dose (TID) levels of up to an impressive 300 Krad (Si), and featuring a Noise Equivalent Temperature Difference (NEDT) of < 20mK, these detectors exhibit exceptional sensitivity. With pixel operability exceeding 95%, low power consumption, and crafted through an advanced commercial foundry process, they represent the forefront of infrared sensing technology, delivering superior performance across diverse applications.
→ Unit Pixel: 8μm nBn T2SL structure
→ Pixel Density: 2K x 2K
→ Pixel Size: ≤ 8μm III-V Compounds-based Detector
→ Dynamic Range: 14 to 16 Bit
→ Spectral Band: 3μm to 5μm
→ Response Time: < 100nsec
→ TID Tolerance: upto 300 krads (Si)
→ NEDT: < 20mK
→ Specific Detectivity: 1011 @2Π ,300K
→ Spectral Responsivity: 3A/W
→ External Quantum Efficiency: >40%
→ Pixel Operability: >95%
→ Low Power Consumption
→ Fabricated in a Commericial Foundry process